q?v~zy??q?v?_rc]??qcabdq HFS10N60U bv dss = 600 v r ds(on) typ = 0.67
i d =9.5 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 29 nc (typ.) ? extended safe operating area ? lower r ds(on) : 0.67
7 \ s # 9 gs =10v ? 100% avalanche tested features HFS10N60U 600v n-channel mosfet 1.gate 2. drain 3. source 2 1 3 to-220f oct 2013 absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 9.5* a drain current ? continuous (t c = 100 e ) 6.0* a i dm drain current ? pulsed (note 1) 38* a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 470 mj i ar avalanche current (note 1) 9.5 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 50 w 0.40 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 2.5 e /w r ja junction-to-ambient -- 62.5 * drain current limited by maximum junction temperature
q?v~zy??q?v?_rc]??qcabdq HFS10N60U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=9.6mh, i as =9.5a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |